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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4744 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed *Built-in Damper Diode APPLICATIONS *Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage IC(peak) Collector Current-Peak ww w 1500 scs .i UNIT V 6 V 7 A 16 A 7 A 50 W .cn mi e IC(surge) Collector Current-Surge ID C-E Diode Forward Current Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4744 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 400mA ; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A B 1.5 V ICES Collector Cutoff Current VCE= 1500V ; RBE= 0 500 A hFE DC Current Gain IC= 1A ; VCE= 5V VECF C-E Diode Forward Voltage tf Fall Time w w. w sem isc IF= 6A ICP= 5A , IB1= 1A; IB2= -2A .cn i 25 2.0 V 0.4 s isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4744 w w scs .i w .cn mi e isc Websitewww.iscsemi.cn |
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